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Samsung M3 78T5663RZ3-CF7 2GB
AMD R748G2606U2S 8GB

Samsung M3 78T5663RZ3-CF7 2GB vs AMD R748G2606U2S 8GB

Overall score
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Overall score
star star star star star
AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB

Differences Specifications Comments

Differences

Samsung M3 78T5663RZ3-CF7 2GB Reasons to consider
Samsung M3 78T5663RZ3-CF7 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 15
    Average value in the tests
AMD R748G2606U2S 8GB Reasons to consider
AMD R748G2606U2S 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    61 left arrow 65
    Around -7% lower latency
  • Faster write speed, GB/s
    8.9 left arrow 2,784.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T5663RZ3-CF7 2GB
AMD R748G2606U2S 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    65 left arrow 61
  • Read speed, GB/s
    4,806.8 left arrow 15.0
  • Write speed, GB/s
    2,784.6 left arrow 8.9
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    932 left arrow 2028

Samsung M3 78T5663RZ3-CF7 2GB RAM comparisons

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

AMD R748G2606U2S 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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