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Samsung M3 93T5750CZA-CE6 2GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

Samsung M3 93T5750CZA-CE6 2GB vs A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

Overall score
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 14.7
    Average value in the tests
  • Faster write speed, GB/s
    2,622.0 left arrow 11.1
    Average value in the tests
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB Reasons to consider
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    45 left arrow 77
    Around -71% lower latency
  • Higher memory bandwidth, mbps
    25600 left arrow 5300
    Around 4.83 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 45
  • Read speed, GB/s
    3,405.2 left arrow 14.7
  • Write speed, GB/s
    2,622.0 left arrow 11.1
  • Memory bandwidth, mbps
    5300 left arrow 25600
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 2556

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB RAM comparisons

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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