RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
18.6
Average value in the tests
Faster write speed, GB/s
2,622.0
14.0
Average value in the tests
Reasons to consider
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Report a bug
Below the latency in the PassMark tests, ns
21
77
Around -267% lower latency
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
21
Read speed, GB/s
3,405.2
18.6
Write speed, GB/s
2,622.0
14.0
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 12 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
763
3356
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB RAM comparisons
Kingston KF560C40-16 16GB
Samsung M393B5170EH1-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3600C19-8GVRB 8GB
Samsung M3 93T5750CZA-CE6 2GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3000C14-16GVKD 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston 9905700-026.A00G 8GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-3600C19-8GTZRB 8GB
Kingston ACR16D3LS1NGG/4G 4GB
Corsair CMWX8GD3200C16W2E 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston 99U5663-006.A00G 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
G Skill Intl F4-2800C15-4GVR 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston KHX2933C17S4/32G 32GB
A-DATA Technology VDQVE1B16 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BL16G26C16S4B.16FD 16GB
Kingston 9905471-002.A00LF 2GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9905711-035.A00G 8GB
Report a bug
×
Bug description
Source link