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Samsung M3 93T5750CZA-CE6 2GB
Lexar Co Limited LD4AU008G-H3200GST 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Lexar Co Limited LD4AU008G-H3200GST 8GB

Overall score
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
Lexar Co Limited LD4AU008G-H3200GST 8GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 19.9
    Average value in the tests
  • Faster write speed, GB/s
    2,622.0 left arrow 13.9
    Average value in the tests
Lexar Co Limited LD4AU008G-H3200GST 8GB Reasons to consider
Lexar Co Limited LD4AU008G-H3200GST 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    34 left arrow 77
    Around -126% lower latency
  • Higher memory bandwidth, mbps
    25600 left arrow 5300
    Around 4.83 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 34
  • Read speed, GB/s
    3,405.2 left arrow 19.9
  • Write speed, GB/s
    2,622.0 left arrow 13.9
  • Memory bandwidth, mbps
    5300 left arrow 25600
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 3271

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Lexar Co Limited LD4AU008G-H3200GST 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Memory RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
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Asgard VMA42UH-MEC1U2AJ2 16GB
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Kingston 99U5723-002.A00G 8GB
Kingston 99U5723-002.A00G 8GB
Memory RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
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Memory RAM
Samsung M393B2G70BH0-YK0 16GB
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SK Hynix HMT425S6CFR6A-PB 2GB
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Crucial Technology CT16G4SFD824A.C16FJ 16GB
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A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
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Corsair CM4X4GF2133C15S2 4GB
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Crucial Technology BLS8G3N18AES4.16FE 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
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Memory RAM
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Memory RAM
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Memory RAM
Apacer Technology 78.B1GET.AU00C 4GB
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Memory RAM