RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
20.4
Average value in the tests
Faster write speed, GB/s
2,622.0
18.1
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
77
Around -328% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
18
Read speed, GB/s
3,405.2
20.4
Write speed, GB/s
2,622.0
18.1
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
3529
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston ACR256X64D3S1333C9 2GB
Kingston CAC24D4S7D8MB-16 16GB
Kllisre KRE-D3U1600M/8G 8GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology BL8G30C15U4R.8FE 8GB
Kingston K1N7HK-ELC 2GB
Crucial Technology CT16G4DFD824A.M16FD 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Asgard VMA41UH-MEC1U2AW1 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
A-DATA Technology AO1P26KC8T1-BXPS 8GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Kingston KF552C40-16 16GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
V-Color Technology Inc. TA48G32S816SK 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Apacer Technology 76.C102G.D170B 8GB
A-DATA Technology DDR2 800G 2GB
Kingston 9905744-023.A00G 16GB
Corsair CMD8GX3M2A2933C12 4GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
A-DATA Technology DOVF1B163G2G 2GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK64GX4M2A2666C16 32GB
Report a bug
×
Bug description
Source link