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Samsung M378A1K43EB2-CWE 8GB
Mushkin MR[ABC]4U266GHHF8G 8GB

Samsung M378A1K43EB2-CWE 8GB vs Mushkin MR[ABC]4U266GHHF8G 8GB

Overall score
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Overall score
star star star star star
Mushkin MR[ABC]4U266GHHF8G 8GB

Mushkin MR[ABC]4U266GHHF8G 8GB

Differences Specifications Comments

Differences

Samsung M378A1K43EB2-CWE 8GB Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
  • Faster reading speed, GB/s
    17.6 left arrow 17
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 21300
    Around 1.2% higher bandwidth
Mushkin MR[ABC]4U266GHHF8G 8GB Reasons to consider
Mushkin MR[ABC]4U266GHHF8G 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 33
    Around -3% lower latency
  • Faster write speed, GB/s
    12.2 left arrow 12.0
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Mushkin MR[ABC]4U266GHHF8G 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    33 left arrow 32
  • Read speed, GB/s
    17.6 left arrow 17.0
  • Write speed, GB/s
    12.0 left arrow 12.2
  • Memory bandwidth, mbps
    25600 left arrow 21300
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2910 left arrow 2958

Samsung M378A1K43EB2-CWE 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Mushkin MR[ABC]4U266GHHF8G 8GB RAM comparisons

Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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