RAM comparison Samsung M378A5244CB0-CTD 4GB vs Micron Technology 18ASF1G72PZ-2G1B1 8GB

Samsung M378A5244CB0-CTD 4GB vs Micron Technology 18ASF1G72PZ-2G1B1 8GB

Overall score

Samsung M378A5244CB0-CTD 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378A5244CB0-CTD 4GB

Below the latency in the PassMark tests, ns

36 46

Around 22% lower latency
Faster reading speed, GB/s

15.8 11

Average value in the tests
Faster write speed, GB/s

11.8 9.1

Average value in the tests
Higher memory bandwidth, mbps

21300 17000

Around 1.25% higher bandwidth

Reasons to consider
Micron Technology 18ASF1G72PZ-2G1B1 8GB

Complete list of technical specifications

Samsung M378A5244CB0-CTD 4GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Main characteristics

Other

Description

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2497 2396

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns