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Samsung M378B5173BH0-CH9 4GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Compare
Samsung M378B5173BH0-CH9 4GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB
Overall score
Samsung M378B5173BH0-CH9 4GB
Overall score
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5173BH0-CH9 4GB
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Below the latency in the PassMark tests, ns
23
45
Around 49% lower latency
Faster reading speed, GB/s
13.4
11.7
Average value in the tests
Higher memory bandwidth, mbps
10600
1900
Around 5.58% higher bandwidth
Reasons to consider
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Report a bug
Faster write speed, GB/s
8.4
8.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378B5173BH0-CH9 4GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
23
45
Read speed, GB/s
13.4
11.7
Write speed, GB/s
8.0
8.4
Memory bandwidth, mbps
10600
1900
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
no data
Ranking PassMark (The more the better)
2269
2387
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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