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Samsung M378B5673EH1-CF8 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Samsung M378B5673EH1-CF8 2GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Overall score
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score
star star star star star
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 37
    Around 24% lower latency
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB Reasons to consider
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Report a bug
  • Faster reading speed, GB/s
    21.4 left arrow 12.7
    Average value in the tests
  • Faster write speed, GB/s
    14.3 left arrow 7.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 8500
    Around 2.26 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 37
  • Read speed, GB/s
    12.7 left arrow 21.4
  • Write speed, GB/s
    7.5 left arrow 14.3
  • Memory bandwidth, mbps
    8500 left arrow 19200
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1988 left arrow 3448

Samsung M378B5673EH1-CF8 2GB RAM comparisons

Nanya Technology M2X4G64CB8HG5N-DG 4GB
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ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB RAM comparisons

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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