Samsung M378B5673EH1-CF8 2GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Overall score

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB

Reasons to consider
Samsung M378B5673EH1-CF8 2GB

Below the latency in the PassMark tests, ns

28 37

Around 24% lower latency

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Reasons to consider
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Faster reading speed, GB/s

21.4 12.7

Average value in the tests
Faster write speed, GB/s

14.3 7.5

Average value in the tests
Higher memory bandwidth, mbps

19200 8500

Around 2.26 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M378B5673EH1-CF8 2GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

28 37
Read speed, GB/s

12.7 21.4
Write speed, GB/s

7.5 14.3
Memory bandwidth, mbps

8500 19200

Other

Description

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
Timings / Clock speed

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

1988 3448

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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