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Samsung M378B5673EH1-CF8 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Compare
Samsung M378B5673EH1-CF8 2GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
37
Around 24% lower latency
Reasons to consider
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Report a bug
Faster reading speed, GB/s
21.4
12.7
Average value in the tests
Faster write speed, GB/s
14.3
7.5
Average value in the tests
Higher memory bandwidth, mbps
19200
8500
Around 2.26 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
37
Read speed, GB/s
12.7
21.4
Write speed, GB/s
7.5
14.3
Memory bandwidth, mbps
8500
19200
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
Timings / Clock speed
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1988
3448
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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