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Samsung M378B5673EH1-CF8 2GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Samsung M378B5673EH1-CF8 2GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Overall score
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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score
star star star star star
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 30
    Around 7% lower latency
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB Reasons to consider
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Report a bug
  • Faster reading speed, GB/s
    16 left arrow 12.7
    Average value in the tests
  • Faster write speed, GB/s
    10.6 left arrow 7.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 8500
    Around 3.01 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 30
  • Read speed, GB/s
    12.7 left arrow 16.0
  • Write speed, GB/s
    7.5 left arrow 10.6
  • Memory bandwidth, mbps
    8500 left arrow 25600
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    1988 left arrow 3026

Samsung M378B5673EH1-CF8 2GB RAM comparisons

Nanya Technology M2X4G64CB8HG5N-DG 4GB
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OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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