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Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Samsung M378B5673EH1-CF8 2GB vs Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Overall score
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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 33
    Around 15% lower latency
Patriot Memory (PDP Systems) 2800 C16 Series 8GB Reasons to consider
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Report a bug
  • Faster reading speed, GB/s
    16.5 left arrow 12.7
    Average value in the tests
  • Faster write speed, GB/s
    11.4 left arrow 7.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 8500
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 33
  • Read speed, GB/s
    12.7 left arrow 16.5
  • Write speed, GB/s
    7.5 left arrow 11.4
  • Memory bandwidth, mbps
    8500 left arrow 17000
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1988 left arrow 2913

Samsung M378B5673EH1-CF8 2GB RAM comparisons

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
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