RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673EH1-CF8 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Reasons to consider
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
28
Around -22% lower latency
Faster reading speed, GB/s
18.1
12.7
Average value in the tests
Faster write speed, GB/s
15.0
7.5
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
23
Read speed, GB/s
12.7
18.1
Write speed, GB/s
7.5
15.0
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1988
3317
Samsung M378B5673EH1-CF8 2GB RAM comparisons
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Essencore Limited KD48GU880-26N160T 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Corsair CMSX32GX4M2A3200C22 16GB
G Skill Intl F4-2133C15-8GRS 8GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
Samsung M393B5170FH0-CK0 4GB
Kingston KHX2933C17S4/16G 16GB
Apacer Technology 78.B1GET.AU00C 4GB
Kingston KHX2400C14S4/16G 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK8GX4M1Z3600C18 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston KYXC0V-MIH 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 9905702-012.A00G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX2666C16D4/16GX 16GB
Elpida EBJ10UE8BAFA-AE-E 1GB
G Skill Intl F4-2400C17-16GSXF 16GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-3200C16-16GTZKY 16GB
Report a bug
×
Bug description
Source link