RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3000C14-8GVR 8GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs G Skill Intl F4-3000C14-8GVR 8GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
G Skill Intl F4-3000C14-8GVR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
18.2
Average value in the tests
Reasons to consider
G Skill Intl F4-3000C14-8GVR 8GB
Report a bug
Below the latency in the PassMark tests, ns
20
56
Around -180% lower latency
Faster write speed, GB/s
14.0
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3000C14-8GVR 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
20
Read speed, GB/s
4,387.7
18.2
Write speed, GB/s
1,813.5
14.0
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
693
3359
Samsung M378T5663QZ3-CF7 2GB RAM comparisons
Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB
G Skill Intl F4-3000C14-8GVR 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173QH0-YK0 4GB
Samsung 9905599-020.A00G 16GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3000C14-8GVR 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
AMD R538G1601U2S 8GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS16G4D26BFSE.16FD 16GB
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
Samsung M471B5273CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston X2YH1K-MIE-NX 16GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT102464BD160B 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Panram International Corporation W4N2666PS-16G 16GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4B8G1J2800K14K 8GB
Report a bug
×
Bug description
Source link