Samsung M386B4G70DM0-CMA4 32GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Samsung M386B4G70DM0-CMA4 32GB vs Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Overall score
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Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Overall score
star star star star star
Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Differences

  • Below the latency in the PassMark tests, ns
    33 left arrow 52
    Around -58% lower latency
  • Faster reading speed, GB/s
    10.3 left arrow 9.7
    Average value in the tests
  • Faster write speed, GB/s
    8.1 left arrow 7.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 14900
    Around 1.29 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M386B4G70DM0-CMA4 32GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    52 left arrow 33
  • Read speed, GB/s
    9.7 left arrow 10.3
  • Write speed, GB/s
    7.2 left arrow 8.1
  • Memory bandwidth, mbps
    14900 left arrow 19200
Other
  • Description
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    9-10-9-28 / 1866 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2173 left arrow 2235
RAM Latency Calculator
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