RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
31
Around 16% lower latency
Reasons to consider
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Report a bug
Faster reading speed, GB/s
16.4
12.8
Average value in the tests
Faster write speed, GB/s
10.5
9.0
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
31
Read speed, GB/s
12.8
16.4
Write speed, GB/s
9.0
10.5
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
3039
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-3600C16-8GTZSW 8GB
Samsung M391B5673EH1-CH9 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-2400C17-4GFX 4GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology BL16G32C16U4BL.M16FE 16GB
AMD AE34G1601U1 4GB
Kingston 9905624-045.A00G 8GB
Kingston ACR16D3LS1NGG/4G 4GB
G Skill Intl F4-2133C15-16GIS 16GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMW32GX4M4D3600C18 8GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
G Skill Intl F4-3000C16-16GSXWB 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston HP26D4U9S8ME-8 8GB
Crucial Technology CT102464BF160B.C16 8GB
Kllisre 0000 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Samsung M395T2863QZ4-CF76 1GB
Golden Empire CL16-16-16 D4-2400 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMSX16GX4M1A2666C18 16GB
Report a bug
×
Bug description
Source link