RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Micron Technology 8ATF1G64AZ-2G6B1 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Reasons to consider
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Report a bug
Below the latency in the PassMark tests, ns
21
26
Around -24% lower latency
Faster reading speed, GB/s
19.1
12.8
Average value in the tests
Faster write speed, GB/s
14.5
9.0
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
21
Read speed, GB/s
12.8
19.1
Write speed, GB/s
9.0
14.5
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
3427
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-3200C16-16GSXKB 16GB
Samsung M471A5143SB1-CRC 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLS4G4D240FSB.8FAR 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Kingston 9905701-143.A00G 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-4000C18-8GTZR 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Samsung SF4641G8CKHI6DFSDS 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMV4GX4M1A2133C15 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Kingston KHX1600C9S3L/8G 8GB
Kingston 9905630-039.A00G 16GB
Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Report a bug
×
Bug description
Source link