RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673FH0-CH9 2GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Compare
Samsung M391B5673FH0-CH9 2GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Overall score
Samsung M391B5673FH0-CH9 2GB
Overall score
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673FH0-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
31
Around 10% lower latency
Reasons to consider
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Report a bug
Faster reading speed, GB/s
15.7
13.3
Average value in the tests
Faster write speed, GB/s
13.3
8.5
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673FH0-CH9 2GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
31
Read speed, GB/s
13.3
15.7
Write speed, GB/s
8.5
13.3
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2213
3318
Samsung M391B5673FH0-CH9 2GB RAM comparisons
Samsung M391B5673EH1-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Ramaxel Technology RMR5030ME68F9F1600 4GB
Kingston HP28D4S7D8HA-16X 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston ACR24D4S7D8MB-16 16GB
Kingston HP669238-071-HYC 4GB
G Skill Intl F4-2133C15-8GRK 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Corsair CMK64GX4M4B3466C16 16GB
Samsung M391B5673FH0-CH9 2GB
Chun Well Technology Holding Limited MD4U1632161DCW 16G
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston 9965589-008.D02G 8GB
Samsung M471B1G73QH0-YK0 8GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Elpida EBJ40UG8EFU0-GN-F 4GB
SK Hynix HMA41GU6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Avant Technology J644GU44J9266NF 32GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMD64GX4M8B3200C16 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
Corsair CMZ16GX3M2A1866C9 8GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Report a bug
×
Bug description
Source link