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Samsung M393A1G40DB0-CPB 8GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Compare
Samsung M393A1G40DB0-CPB 8GB vs OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Overall score
Samsung M393A1G40DB0-CPB 8GB
Overall score
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393A1G40DB0-CPB 8GB
Report a bug
Reasons to consider
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
49
Around -81% lower latency
Faster reading speed, GB/s
17.4
10.9
Average value in the tests
Faster write speed, GB/s
14.5
8.7
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393A1G40DB0-CPB 8GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
49
27
Read speed, GB/s
10.9
17.4
Write speed, GB/s
8.7
14.5
Memory bandwidth, mbps
17000
25600
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2427
3692
Samsung M393A1G40DB0-CPB 8GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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