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Samsung M393B1G70BH0-YK0 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Compare
Samsung M393B1G70BH0-YK0 8GB vs Micron Technology 8ATF2G64AZ-3G2E1 16GB
Overall score
Samsung M393B1G70BH0-YK0 8GB
Overall score
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-YK0 8GB
Report a bug
Reasons to consider
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Report a bug
Below the latency in the PassMark tests, ns
33
49
Around -48% lower latency
Faster reading speed, GB/s
16.9
10.2
Average value in the tests
Faster write speed, GB/s
10.4
8.1
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
33
Read speed, GB/s
10.2
16.9
Write speed, GB/s
8.1
10.4
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2465
3035
Samsung M393B1G70BH0-YK0 8GB RAM comparisons
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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