RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C18-16GRS 16GB
Compare
Samsung M393B1K70CH0-CH9 8GB vs G Skill Intl F4-3200C18-16GRS 16GB
Overall score
Samsung M393B1K70CH0-CH9 8GB
Overall score
G Skill Intl F4-3200C18-16GRS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1K70CH0-CH9 8GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C18-16GRS 16GB
Report a bug
Below the latency in the PassMark tests, ns
40
44
Around -10% lower latency
Faster reading speed, GB/s
16
11.2
Average value in the tests
Faster write speed, GB/s
14.0
8.1
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C18-16GRS 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
44
40
Read speed, GB/s
11.2
16.0
Write speed, GB/s
8.1
14.0
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2293
2965
Samsung M393B1K70CH0-CH9 8GB RAM comparisons
EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB
G Skill Intl F4-3200C18-16GRS 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C16-16GTRG 16GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C18-16GRS 16GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-2800C15-16GRKD 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Apacer Technology 78.C1GS7.AUW0B 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA82GU6AFR8N-TF 16GB
Micron Technology 16GB 2133MHz DIMM 16GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-2800C15-8GVSB 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Kingston 9965525-018.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
PNY Electronics PNY 2GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
Samsung M471B5273CH0-CH9 4GB
Samsung T471A1K43CB1-CRC 8GB
G Skill Intl F3-2133C9-4GAB 4GB
SK Hynix HMA81GU6AFR8N-UH 8GB
AMD R5316G1609U2K 8GB
Crucial Technology BL16G32C16S4B.16FE 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Report a bug
×
Bug description
Source link