RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1K70QB0-CK0 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Compare
Samsung M393B1K70QB0-CK0 8GB vs Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Overall score
Samsung M393B1K70QB0-CK0 8GB
Overall score
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1K70QB0-CK0 8GB
Report a bug
Reasons to consider
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
47
Around -81% lower latency
Faster reading speed, GB/s
18.6
10.4
Average value in the tests
Faster write speed, GB/s
16.2
7.8
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1K70QB0-CK0 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
47
26
Read speed, GB/s
10.4
18.6
Write speed, GB/s
7.8
16.2
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2169
3756
Samsung M393B1K70QB0-CK0 8GB RAM comparisons
V-Color Technology Inc. TD8G16C10-OC18AK 8GB
Kingston 9905430-400.A00LF 2GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB RAM comparisons
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBE10UE8AFSA-8G-F 1GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
AMD AE34G1601U1 4GB
Wilk Elektronik S.A. GR2400S464L17S/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Samsung M393B1K70QB0-CK0 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston 9965662-004.A00G 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kllisre M378A1K43BB2-CRC 8GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 9905702-020.A00G 8GB
Kingston KVR533D2N4 512MB
Samsung M471A1A43DB0-CPB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMR32GX4M4C3333C16 8GB
Report a bug
×
Bug description
Source link