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Samsung M393B2G70BH0-CK0 16GB
Micron Technology 4ATF51264HZ-2G3E1 4GB

Samsung M393B2G70BH0-CK0 16GB vs Micron Technology 4ATF51264HZ-2G3E1 4GB

Overall score
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Overall score
star star star star star
Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

Differences Specifications Comments

Differences

Samsung M393B2G70BH0-CK0 16GB Reasons to consider
Samsung M393B2G70BH0-CK0 16GB
Report a bug
Micron Technology 4ATF51264HZ-2G3E1 4GB Reasons to consider
Micron Technology 4ATF51264HZ-2G3E1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 54
    Around -100% lower latency
  • Faster reading speed, GB/s
    14.8 left arrow 9.2
    Average value in the tests
  • Faster write speed, GB/s
    10.2 left arrow 8.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    54 left arrow 27
  • Read speed, GB/s
    9.2 left arrow 14.8
  • Write speed, GB/s
    8.1 left arrow 10.2
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2105 left arrow 2173

Samsung M393B2G70BH0-CK0 16GB RAM comparisons

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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