RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70BH0-CK0 16GB
Samsung M378A1K43EB2-CVF 8GB
Compare
Samsung M393B2G70BH0-CK0 16GB vs Samsung M378A1K43EB2-CVF 8GB
Overall score
Samsung M393B2G70BH0-CK0 16GB
Overall score
Samsung M378A1K43EB2-CVF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B2G70BH0-CK0 16GB
Report a bug
Reasons to consider
Samsung M378A1K43EB2-CVF 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
54
Around -93% lower latency
Faster reading speed, GB/s
17.4
9.2
Average value in the tests
Faster write speed, GB/s
14.5
8.1
Average value in the tests
Higher memory bandwidth, mbps
23400
12800
Around 1.83 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B2G70BH0-CK0 16GB
Samsung M378A1K43EB2-CVF 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
54
28
Read speed, GB/s
9.2
17.4
Write speed, GB/s
8.1
14.5
Memory bandwidth, mbps
12800
23400
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
9-9-9-24 / 1600 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)
2105
3419
Samsung M393B2G70BH0-CK0 16GB RAM comparisons
Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
Samsung M378A1K43EB2-CVF 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CK0 16GB
Samsung M378A1K43EB2-CVF 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Essencore Limited IM44GU48N26-FFFHM 4GB
Samsung 1600 CL10 Series 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Maxsun MSD44G24Q3 4GB
Kingston 9905316-106.A02LF 1GB
Corsair CMSX16GX4M1A2400C16 16GB
Qimonda 64T128020EDL2.5C2 1GB
G Skill Intl F4-4000C19-4GVK 4GB
Kingston KHX318C10FR/8G 8GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
PNY Electronics PNY 2GB
Mushkin 99[2/7/4]200F 8GB
SK Hynix HMT351S6EFR8C-PB 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-2133C15-4GNT 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Transcend Information TS2GLH64V4B 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
×
Bug description
Source link