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Samsung M393B5170FH0-CK0 4GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Samsung M393B5170FH0-CK0 4GB vs Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Overall score
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Overall score
star star star star star
Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Differences Specifications Comments

Differences

Samsung M393B5170FH0-CK0 4GB Reasons to consider
Samsung M393B5170FH0-CK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 38
    Around 29% lower latency
Micron Technology 8ATF1G64AZ-2G3H1R 8GB Reasons to consider
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Report a bug
  • Faster reading speed, GB/s
    15.3 left arrow 11.8
    Average value in the tests
  • Faster write speed, GB/s
    10.5 left arrow 7.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B5170FH0-CK0 4GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 38
  • Read speed, GB/s
    11.8 left arrow 15.3
  • Write speed, GB/s
    7.3 left arrow 10.5
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2057 left arrow 2346

Samsung M393B5170FH0-CK0 4GB RAM comparisons

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Micron Technology 8ATF1G64AZ-2G3H1R 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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