RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5170FH0-CK0 4GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Compare
Samsung M393B5170FH0-CK0 4GB vs Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Overall score
Samsung M393B5170FH0-CK0 4GB
Overall score
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170FH0-CK0 4GB
Report a bug
Reasons to consider
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
27
Around -8% lower latency
Faster reading speed, GB/s
14.3
11.8
Average value in the tests
Faster write speed, GB/s
10.7
7.3
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170FH0-CK0 4GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
25
Read speed, GB/s
11.8
14.3
Write speed, GB/s
7.3
10.7
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2057
2583
Samsung M393B5170FH0-CK0 4GB RAM comparisons
Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBJ21UE8BDF0-DJ-F 2GB
SK Hynix HMA81GS6JJR8N-VK 8GB
Kingston 9965525-140.A00LF 8GB
INTENSO 5641152 4GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-4266C17-16GVKB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX3200C16D4/4GX 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Kingston 9905471-076.A00LF 8GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Corsair CMD32GX4M4A2400C12 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Samsung M471B5173QH0-YK0 4GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
A-DATA Technology DDR3L 1600G 4GB
A-DATA Technology DDR4 3600 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMK128GX4M4E3200C16 32GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3000C15-8GRR 8GB
Report a bug
×
Bug description
Source link