RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5170FH0-CK0 4GB
Samsung M393A2G40EB2-CTD 16GB
Compare
Samsung M393B5170FH0-CK0 4GB vs Samsung M393A2G40EB2-CTD 16GB
Overall score
Samsung M393B5170FH0-CK0 4GB
Overall score
Samsung M393A2G40EB2-CTD 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170FH0-CK0 4GB
Report a bug
Below the latency in the PassMark tests, ns
27
44
Around 39% lower latency
Faster reading speed, GB/s
11.8
8.5
Average value in the tests
Faster write speed, GB/s
7.3
5.6
Average value in the tests
Reasons to consider
Samsung M393A2G40EB2-CTD 16GB
Report a bug
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170FH0-CK0 4GB
Samsung M393A2G40EB2-CTD 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
44
Read speed, GB/s
11.8
8.5
Write speed, GB/s
7.3
5.6
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2057
1660
Samsung M393B5170FH0-CK0 4GB RAM comparisons
Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB
Samsung M393A2G40EB2-CTD 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BL16G26C16U4W.16FD 16GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
Kingston K6VDX7-HYD 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3300C16-4GRRD 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Crucial Technology CT51264AC800.C16FC 4GB
Kingston 9905598-026.A00G 16GB
SK Hynix HYMP512U64CP8-Y5 1GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2400C16-8GRS 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD48G213381 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
Kingston 9905403-156.A00LF 2GB
Samsung M393A1G40DB1-CRC 8GB
‹
›
Report a bug
×
Bug description
Source link