RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5270CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Compare
Samsung M393B5270CH0-CH9 4GB vs Micron Technology 8ATF1G64HZ-3G2R1 8GB
Overall score
Samsung M393B5270CH0-CH9 4GB
Overall score
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5270CH0-CH9 4GB
Report a bug
Below the latency in the PassMark tests, ns
42
51
Around 18% lower latency
Reasons to consider
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Report a bug
Faster reading speed, GB/s
15.8
10.6
Average value in the tests
Faster write speed, GB/s
12.5
9.0
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
51
Read speed, GB/s
10.6
15.8
Write speed, GB/s
9.0
12.5
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2423
2570
Samsung M393B5270CH0-CH9 4GB RAM comparisons
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMD16GX4M4B3600C18 4GB
Samsung M393B5270CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9905471-071.A00LF 8GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston XN205T-HYD2 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMSX16GX4M2A2666C18 8GB
Samsung M3 78T2863QZS-CF7 1GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
A-DATA Technology DQVE1908 512MB
Corsair CMSO8GX4M1A2133C15 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
G Skill Intl F4-3200C16-8GSXKB 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston KHX3600C18D4/16GX 16GB
Report a bug
×
Bug description
Source link