RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-4133C19-8GTZKKF 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-4133C19-8GTZKKF 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
G Skill Intl F4-4133C19-8GTZKKF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
21.4
Average value in the tests
Faster write speed, GB/s
2,404.5
17.8
Average value in the tests
Reasons to consider
G Skill Intl F4-4133C19-8GTZKKF 8GB
Report a bug
Below the latency in the PassMark tests, ns
30
104
Around -247% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-4133C19-8GTZKKF 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
30
Read speed, GB/s
3,192.0
21.4
Write speed, GB/s
2,404.5
17.8
Memory bandwidth, mbps
6400
17000
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
no data
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
786
4156
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
G Skill Intl F4-4133C19-8GTZKKF 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Crucial Technology CT2K102464BD160B 8GB
G Skill Intl F4-2133C15-4GRR 4GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Kingston KHX1866C10D3/8GX 8GB
Corsair CMK32GX4M4K3600C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston ACR24D4S7D8MB-16 16GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-4133C19-8GTZKKF 8GB
Kingston 9905403-515.A00LF 8GB
Corsair CMK32GX4M4A2400C16 8GB
Kingston 9905403-437.A01LF 4GB
G Skill Intl F4-2666C15-8GVB 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Apacer Technology 78.CAGPP.40C0B 8GB
Samsung M393B5170FH0-CK0 4GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-3600C17-8GTRG 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-5333C22-8GTRG 8GB
Report a bug
×
Bug description
Source link