RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
20.4
Average value in the tests
Faster write speed, GB/s
2,404.5
18.1
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
104
Around -478% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
18
Read speed, GB/s
3,192.0
20.4
Write speed, GB/s
2,404.5
18.1
Memory bandwidth, mbps
6400
19200
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
786
3529
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PNY Electronics PNY 2GB
SK Hynix HMA81GU6CJR8N-UH 8GB
Samsung M395T2863QZ4-CF76 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Mushkin 991988 (996988) 4GB
Golden Empire CL19-25-25 D4-4000 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston KF2666C13D4/8GX 8GB
Qimonda 72T128420EFA3SB2 1GB
Kingston KHX2400C15S4/8G 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Corsair CMK16GX4M2C3000C15 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
G Skill Intl F4-5066C20-8GVK 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
Kingston 99U5595-005.A00LF 2GB
G Skill Intl F4-4000C19-8GTZ 8GB
Kingston 9905469-143.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology CB8GU2666.C8ET 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-3000C15-8GRRB 8GB
Kingston 99U5474-010.A00LF 2GB
Essencore Limited IM48GU48N24-FFFHM 8GB
Mushkin 991988 (996988) 4GB
Corsair CMK8GX4M2A2800C16 4GB
Report a bug
×
Bug description
Source link