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Samsung M4 70T2864QZ3-CE6 1GB
Inmos + 256MB
Compare
Samsung M4 70T2864QZ3-CE6 1GB vs Inmos + 256MB
Overall score
Samsung M4 70T2864QZ3-CE6 1GB
Overall score
Inmos + 256MB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2864QZ3-CE6 1GB
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Faster reading speed, GB/s
3
11.5
Average value in the tests
Reasons to consider
Inmos + 256MB
Report a bug
Below the latency in the PassMark tests, ns
30
65
Around -117% lower latency
Faster write speed, GB/s
9.1
1,574.4
Average value in the tests
Higher memory bandwidth, mbps
16800
5300
Around 3.17 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2864QZ3-CE6 1GB
Inmos + 256MB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
30
Read speed, GB/s
3,858.9
11.5
Write speed, GB/s
1,574.4
9.1
Memory bandwidth, mbps
5300
16800
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 667 MHz
no data
Ranking PassMark (The more the better)
607
2318
Samsung M4 70T2864QZ3-CE6 1GB RAM comparisons
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Inmos + 256MB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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