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Samsung M4 70T2864QZ3-CE6 1GB
Micron Technology 4ATF51264HZ-2G6E3 4GB

Samsung M4 70T2864QZ3-CE6 1GB vs Micron Technology 4ATF51264HZ-2G6E3 4GB

Overall score
star star star star star
Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

Overall score
star star star star star
Micron Technology 4ATF51264HZ-2G6E3 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

Differences Specifications Comments

Differences

Samsung M4 70T2864QZ3-CE6 1GB Reasons to consider
Samsung M4 70T2864QZ3-CE6 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 16.6
    Average value in the tests
Micron Technology 4ATF51264HZ-2G6E3 4GB Reasons to consider
Micron Technology 4ATF51264HZ-2G6E3 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 65
    Around -110% lower latency
  • Faster write speed, GB/s
    12.5 left arrow 1,574.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 5300
    Around 4.02 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T2864QZ3-CE6 1GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    65 left arrow 31
  • Read speed, GB/s
    3,858.9 left arrow 16.6
  • Write speed, GB/s
    1,574.4 left arrow 12.5
  • Memory bandwidth, mbps
    5300 left arrow 21300
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    607 left arrow 2605

Samsung M4 70T2864QZ3-CE6 1GB RAM comparisons

Samsung M4 70T2864QZ3-CF7 1GB
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Micron Technology 4ATF51264HZ-2G6E3 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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