RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2953EZ3-CE6 1GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Compare
Samsung M4 70T2953EZ3-CE6 1GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Overall score
Samsung M4 70T2953EZ3-CE6 1GB
Overall score
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
Report a bug
Faster reading speed, GB/s
3
15.7
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
73
Around -135% lower latency
Faster write speed, GB/s
13.3
1,423.3
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
73
31
Read speed, GB/s
3,510.5
15.7
Write speed, GB/s
1,423.3
13.3
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
476
3318
Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons
Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMD64GX4M4C3200C16 16GB
Corsair CMSX4GX3M1A1600C9 4GB
Kingston ACR26D4S9S8ME-8 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMW16GX4M2Z2933C16 8GB
Mushkin 991763 (996763) 4GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Kingston 9905458-017.A01LF 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-2666C19-16GIS 16GB
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-4GRB 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Essencore Limited KD48GU881-26N190A 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston 9965589-031.D01G 2GB
SK Hynix DDR2 800 2G 2GB
AMD R748G2606U2S 8GB
Kingston ACR16D3LS1KNG/4G 4GB
Maxsun MSD416G26Q3 16GB
Report a bug
×
Bug description
Source link