RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A1G44BB0-CWE 8GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Compare
Samsung M471A1G44BB0-CWE 8GB vs Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Overall score
Samsung M471A1G44BB0-CWE 8GB
Overall score
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A1G44BB0-CWE 8GB
Report a bug
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
60
Around -94% lower latency
Faster reading speed, GB/s
18
15.3
Average value in the tests
Faster write speed, GB/s
15.2
11.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A1G44BB0-CWE 8GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
60
31
Read speed, GB/s
15.3
18.0
Write speed, GB/s
11.0
15.2
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2359
3040
Samsung M471A1G44BB0-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Kingston KYXC0V-MID 16GB
Samsung M471A1G44BB0-CWE 8GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-3733C17-16GTZSW 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C16-4GVKB 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW64GX4M8C3200C16 8GB
Kingston K1N7HK-ELC 2GB
Corsair CMR128GX4M8X3800C19 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Corsair CMW32GX4M4K4266C19 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMW16GX4M1Z3600C18 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMV4GX4M1A2133C15 4GB
A-DATA Technology DQVE1908 512MB
Ramaxel Technology RMUA5110MD78HAF-2666 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMT32GX4M4C3466C16 8GB
Kingston 99U5469-045.A00LF 4GB
Samsung M378A5244CB0-CRC 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung M378A1K43DB2-CTD 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston 9905598-019.A00G 16GB
Report a bug
×
Bug description
Source link