RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5244CB0-CWE 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Compare
Samsung M471A5244CB0-CWE 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
38
Around -46% lower latency
Faster reading speed, GB/s
16.8
15.5
Average value in the tests
Faster write speed, GB/s
13.5
12.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
26
Read speed, GB/s
15.5
16.8
Write speed, GB/s
12.0
13.5
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2283
2880
Samsung M471A5244CB0-CWE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM comparisons
Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905702-135.A00G 8GB
AMD R332G1339U1S 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Corsair CMZ16GX3M2A2400C10 8GB
A-DATA Technology AD4S320038G22-B 8GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMH128GX4M4E3200C16 32GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M378A1K43DB2-CTD 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Essencore Limited KD4AGU880-32A160T 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Golden Empire CL18-20-20 D4-3600 8GB
Samsung M471B1G73QH0-YK0 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Mushkin 99[2/7/4]208F 8GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Corsair CMD8GX4M2B3200C16 4GB
Report a bug
×
Bug description
Source link