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Samsung M471B5173QH0-YK0 4GB
AMD R744G2606U1S 4GB

Samsung M471B5173QH0-YK0 4GB vs AMD R744G2606U1S 4GB

Overall score
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Overall score
star star star star star
AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

Differences Specifications Comments

Differences

Samsung M471B5173QH0-YK0 4GB Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    45 left arrow 76
    Around 41% lower latency
AMD R744G2606U1S 4GB Reasons to consider
AMD R744G2606U1S 4GB
Report a bug
  • Faster reading speed, GB/s
    15.7 left arrow 12.3
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 8.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
AMD R744G2606U1S 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    45 left arrow 76
  • Read speed, GB/s
    12.3 left arrow 15.7
  • Write speed, GB/s
    8.0 left arrow 8.7
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1992 left arrow 1809

Samsung M471B5173QH0-YK0 4GB RAM comparisons

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

AMD R744G2606U1S 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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