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Samsung M471B5273DH0-CK0 4GB
Micron Technology 16KTF51264HZ-1G6M1 4GB

Samsung M471B5273DH0-CK0 4GB vs Micron Technology 16KTF51264HZ-1G6M1 4GB

Overall score
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Overall score
star star star star star
Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

Differences Specifications Comments

Differences

Samsung M471B5273DH0-CK0 4GB Reasons to consider
Samsung M471B5273DH0-CK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    41 left arrow 43
    Around 5% lower latency
  • Faster reading speed, GB/s
    13.3 left arrow 10.6
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 6.9
    Average value in the tests
Micron Technology 16KTF51264HZ-1G6M1 4GB Reasons to consider
Micron Technology 16KTF51264HZ-1G6M1 4GB
Report a bug

Specifications

Complete list of technical specifications
Samsung M471B5273DH0-CK0 4GB
Micron Technology 16KTF51264HZ-1G6M1 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    41 left arrow 43
  • Read speed, GB/s
    13.3 left arrow 10.6
  • Write speed, GB/s
    9.0 left arrow 6.9
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2016 left arrow 1647

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RAM Latency Calculator
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