RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
37
Around 19% lower latency
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Faster reading speed, GB/s
16
10.6
Average value in the tests
Faster write speed, GB/s
12.6
6.8
Average value in the tests
Higher memory bandwidth, mbps
19200
8500
Around 2.26 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
37
Read speed, GB/s
10.6
16.0
Write speed, GB/s
6.8
12.6
Memory bandwidth, mbps
8500
19200
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1479
2808
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905584-016.A00LF 4GB
Corsair CMD32GX4M2C3200C14T 16GB
Samsung M471B5673FH0-CF8 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Kingston 9965669-019.A00G 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-2400C17-4GFX 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2800C16-8GVG 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CM4B8G1J3000K16W4 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston 9965600-023.A00G 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C14-16GTZN 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston X2YH1K-MIE 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL16G32C16U4BL.16FE 16GB
Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-3600C17-16GTZKW 16GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kingston 9965640-016.A00G 32GB
Report a bug
×
Bug description
Source link