RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Micron Technology 4ATF51264HZ-2G6E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
38
Around 21% lower latency
Reasons to consider
Micron Technology 4ATF51264HZ-2G6E1 4GB
Report a bug
Faster reading speed, GB/s
14.2
10.6
Average value in the tests
Faster write speed, GB/s
10.3
6.8
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
38
Read speed, GB/s
10.6
14.2
Write speed, GB/s
6.8
10.3
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1479
2148
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Micron Technology 4ATF51264HZ-2G6E1 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMK32GX4M4B3600C18 8GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-2800C18-8GRS 8GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Kingston 9905403-134.A00LF 2GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
Kingston 99U5584-007.A00LF 4GB
Samsung SF4641G8CKHI6DFSDS 8GB
Kingston 99U5474-037.A00LF 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2400C15-16GFX 16GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
Kingston 99U5474-022.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M391A2K43BB1-CRC 16GB
Kingston KHX1866C10D3/8GX 8GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-4000C18-8GVK 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 99U5734-014.A00G 16GB
Kingston KVR16N11/8-SP 8GB
Samsung M393A2G40EB1-CPB 16GB
Report a bug
×
Bug description
Source link