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Samsung M471B5674QH0-YK0 2GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Samsung M471B5674QH0-YK0 2GB vs Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Overall score
star star star star star
Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

Overall score
star star star star star
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Differences Specifications Comments

Differences

Samsung M471B5674QH0-YK0 2GB Reasons to consider
Samsung M471B5674QH0-YK0 2GB
Report a bug
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB Reasons to consider
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    22 left arrow 38
    Around -73% lower latency
  • Faster reading speed, GB/s
    16.9 left arrow 7.2
    Average value in the tests
  • Faster write speed, GB/s
    12.3 left arrow 3.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5674QH0-YK0 2GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    38 left arrow 22
  • Read speed, GB/s
    7.2 left arrow 16.9
  • Write speed, GB/s
    3.0 left arrow 12.3
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    915 left arrow 2708

Samsung M471B5674QH0-YK0 2GB RAM comparisons

Samsung M471B5773DH0-YK0 2GB
Micron Technology 4KTF25664HZ-1G6E1 2GB

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
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