RAM comparison SK Hynix HMA425S6BJR6N-UH 2GB vs Samsung M471A5244CB0-CWE 4GB

SK Hynix HMA425S6BJR6N-UH 2GB vs Samsung M471A5244CB0-CWE 4GB

Overall score

SK Hynix HMA425S6BJR6N-UH 2GB

Overall score

Differences Specifications Comments

Reasons to consider
SK Hynix HMA425S6BJR6N-UH 2GB

Reasons to consider
Samsung M471A5244CB0-CWE 4GB

Below the latency in the PassMark tests, ns

38 101

Around -166% lower latency
Faster reading speed, GB/s

15.5 14.2

Average value in the tests
Faster write speed, GB/s

12.0 7.0

Average value in the tests
Higher memory bandwidth, mbps

25600 19200

Around 1.33 higher bandwidth

Complete list of technical specifications

SK Hynix HMA425S6BJR6N-UH 2GB

Samsung M471A5244CB0-CWE 4GB

Main characteristics

Other

Description

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

1313 2283

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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