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SK Hynix HMA451S6AFR8N-TF 4GB
Samsung M471A5143EB0-CPB 4GB

SK Hynix HMA451S6AFR8N-TF 4GB vs Samsung M471A5143EB0-CPB 4GB

Overall score
star star star star star
SK Hynix HMA451S6AFR8N-TF 4GB

SK Hynix HMA451S6AFR8N-TF 4GB

Overall score
star star star star star
Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

Differences Specifications Comments

Differences

SK Hynix HMA451S6AFR8N-TF 4GB Reasons to consider
SK Hynix HMA451S6AFR8N-TF 4GB
Report a bug
  • Faster reading speed, GB/s
    13.9 left arrow 13.5
    Average value in the tests
Samsung M471A5143EB0-CPB 4GB Reasons to consider
Samsung M471A5143EB0-CPB 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 37
    Around -6% lower latency
  • Faster write speed, GB/s
    10.3 left arrow 10.2
    Average value in the tests

Specifications

Complete list of technical specifications
SK Hynix HMA451S6AFR8N-TF 4GB
Samsung M471A5143EB0-CPB 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    37 left arrow 35
  • Read speed, GB/s
    13.9 left arrow 13.5
  • Write speed, GB/s
    10.2 left arrow 10.3
  • Memory bandwidth, mbps
    17000 left arrow 17000
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2191 left arrow 2155

SK Hynix HMA451S6AFR8N-TF 4GB RAM comparisons

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M471A5143EB0-CPB 4GB RAM comparisons

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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