RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HYMP112U64CP8-S6 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Compare
SK Hynix HYMP112U64CP8-S6 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
SK Hynix HYMP112U64CP8-S6 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HYMP112U64CP8-S6 1GB
Report a bug
Faster reading speed, GB/s
4
17.7
Average value in the tests
Faster write speed, GB/s
2,076.1
12.7
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
59
Around -168% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HYMP112U64CP8-S6 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
22
Read speed, GB/s
4,723.5
17.7
Write speed, GB/s
2,076.1
12.7
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
741
3075
SK Hynix HYMP112U64CP8-S6 1GB RAM comparisons
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP164U64CP6-Y5 512MB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM comparisons
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471A2G43BB2-CWE 16GB
Samsung M471A2G43AB2-CWE 16GB
A-DATA Technology VDQVE1B16 2GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
SK Hynix HYMP112U64CP8-S6 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Apacer Technology GD2.1140CH.001 4GB
Kingston 99U5584-007.A00LF 4GB
G Skill Intl F4-3000C15-8GTZ 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMR64GX4M8C3000C15 8GB
Kingston KVR16N11/8-SP 8GB
Panram International Corporation W4U2400PS-8G 8GB
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Corsair CM3X2G1600C9 2GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Samsung M391B5673FH0-CH9 2GB
Corsair CMU16GX4M2A2666C16 8GB
Samsung M3 78T2863EHS-CF7 1GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Report a bug
×
Bug description
Source link