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SK Hynix HYMP125U64CP8-S6 2GB
Samsung M393A2K40CB2-CTD 16GB

SK Hynix HYMP125U64CP8-S6 2GB vs Samsung M393A2K40CB2-CTD 16GB

Overall score
star star star star star
SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Overall score
star star star star star
Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

Differences Specifications Comments

Differences

SK Hynix HYMP125U64CP8-S6 2GB Reasons to consider
SK Hynix HYMP125U64CP8-S6 2GB
Report a bug
  • Faster reading speed, GB/s
    5 left arrow 10
    Average value in the tests
Samsung M393A2K40CB2-CTD 16GB Reasons to consider
Samsung M393A2K40CB2-CTD 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    52 left arrow 60
    Around -15% lower latency
  • Faster write speed, GB/s
    7.3 left arrow 2,381.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HYMP125U64CP8-S6 2GB
Samsung M393A2K40CB2-CTD 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    60 left arrow 52
  • Read speed, GB/s
    5,082.2 left arrow 10.0
  • Write speed, GB/s
    2,381.6 left arrow 7.3
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    925 left arrow 2306

SK Hynix HYMP125U64CP8-S6 2GB RAM comparisons

A-DATA Technology DQKD1A08 1GB
Samsung M4 70T5663QZ3-CE6 2GB

Samsung M393A2K40CB2-CTD 16GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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