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SK Hynix HYMP164U64CP6-Y5 512MB
Samsung M378A5244CB0-CTD 4GB

SK Hynix HYMP164U64CP6-Y5 512MB vs Samsung M378A5244CB0-CTD 4GB

Overall score
star star star star star
SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Overall score
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Differences Specifications Comments

Differences

SK Hynix HYMP164U64CP6-Y5 512MB Reasons to consider
SK Hynix HYMP164U64CP6-Y5 512MB
Report a bug
  • Faster write speed, GB/s
    8,883.4 left arrow 11.8
    Average value in the tests
Samsung M378A5244CB0-CTD 4GB Reasons to consider
Samsung M378A5244CB0-CTD 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    36 left arrow 44
    Around -22% lower latency
  • Faster reading speed, GB/s
    15.8 left arrow 14
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 5300
    Around 4.02 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HYMP164U64CP6-Y5 512MB
Samsung M378A5244CB0-CTD 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    44 left arrow 36
  • Read speed, GB/s
    14,740.4 left arrow 15.8
  • Write speed, GB/s
    8,883.4 left arrow 11.8
  • Memory bandwidth, mbps
    5300 left arrow 21300
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2811 left arrow 2497

SK Hynix HYMP164U64CP6-Y5 512MB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP112U72CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB

Samsung M378A5244CB0-CTD 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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