RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Report a bug
Faster reading speed, GB/s
3
12.7
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
63
Around -163% lower latency
Faster write speed, GB/s
6.3
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
24
Read speed, GB/s
3,231.0
12.7
Write speed, GB/s
1,447.3
6.3
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
478
2256
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB RAM comparisons
Samsung M323R2GA3BB0-CQKOD 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Corsair CMZ16GX3M2A1866C9 8GB
G Skill Intl F4-3600C17-16GTZ 16GB
Kingston 9965525-140.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Kingston 99U5428-046.A00LF 4GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
Kingston 99U5474-010.A00LF 2GB
Apacer Technology 78.C2GFA.AF30B 8GB
Kingston KVR533D2N4 512MB
Samsung M474A1G43DB0-CPB 8GB
Kingston 99U5474-022.A00LF 2GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Kingston ACR16D3LS1KNG/4G 4GB
Panram International Corporation PUD42400C154GNJW 4GB
Kingston ACR16D3LS1NGG/2G 2GB
Transcend Information TS2GLH64V4B 16GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3333C16-16GVK 16GB
AMD R534G1601U1S-UO 4GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-3600C16-16GVKC 16GB
Kingston 9905471-001.A01LF 2GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Kingston 9965516-112.A00LF 16GB
Corsair CMD16GX4M2B3600C18 8GB
Report a bug
×
Bug description
Source link