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takeMS International AG TMS2GB264D082-805G 2GB
Samsung M386A2G40DB0-CPB 16GB

takeMS International AG TMS2GB264D082-805G 2GB vs Samsung M386A2G40DB0-CPB 16GB

Overall score
star star star star star
takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Overall score
star star star star star
Samsung M386A2G40DB0-CPB 16GB

Samsung M386A2G40DB0-CPB 16GB

Differences Specifications Comments

Differences

takeMS International AG TMS2GB264D082-805G 2GB Reasons to consider
takeMS International AG TMS2GB264D082-805G 2GB
Report a bug
  • Faster reading speed, GB/s
    5 left arrow 10
    Average value in the tests
Samsung M386A2G40DB0-CPB 16GB Reasons to consider
Samsung M386A2G40DB0-CPB 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    45 left arrow 46
    Around -2% lower latency
  • Faster write speed, GB/s
    8.1 left arrow 1,852.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M386A2G40DB0-CPB 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 45
  • Read speed, GB/s
    5,535.6 left arrow 10.0
  • Write speed, GB/s
    1,852.4 left arrow 8.1
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    858 left arrow 2414

takeMS International AG TMS2GB264D082-805G 2GB RAM comparisons

Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB

Samsung M386A2G40DB0-CPB 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M386A2G40DB0-CPB 16GB
Samsung M386A2G40DB0-CPB 16GB
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Kingston 9905403-444.A00LF 4GB
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Apacer Technology 78.C1GS7.AUC0B 8GB
Memory RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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AMD AE34G1601U1 4GB
Samsung M471A2K43EB1-CTD 16GB
Samsung M471A2K43EB1-CTD 16GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Apacer Technology 78.CAGMR.ARC0B 8GB
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Samsung M471B5273CH0-CH9 4GB
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Crucial Technology BLS4G4D240FSC.8FBR2 4GB
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Apacer Technology 78.A1GC6.9H10C 2GB
Inmos + 256MB
Inmos + 256MB
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Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
G Skill Intl F4-3200C16-8GTZ 8GB
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Apacer Technology 78.01GA0.9K5 1GB
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Corsair CMSX32GX4M2A2933C19 16GB
Memory RAM
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Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
Memory RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Apacer Technology 78.C2GFL.C720B 8GB
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Memory RAM