RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-4000C19-4GVK 4GB
Compare
takeMS International AG TMS2GB264D083805EV 2GB vs G Skill Intl F4-4000C19-4GVK 4GB
Overall score
takeMS International AG TMS2GB264D083805EV 2GB
Overall score
G Skill Intl F4-4000C19-4GVK 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
Faster reading speed, GB/s
3
18.8
Average value in the tests
Reasons to consider
G Skill Intl F4-4000C19-4GVK 4GB
Report a bug
Below the latency in the PassMark tests, ns
20
50
Around -150% lower latency
Faster write speed, GB/s
15.1
1,457.4
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-4000C19-4GVK 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
20
Read speed, GB/s
3,757.3
18.8
Write speed, GB/s
1,457.4
15.1
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
557
3162
takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C19-4GVK 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5474-013.A00LF 2GB
G Skill Intl F4-3600C17-8GTRG 8GB
Samsung M378A1G43DB0-CPB 8GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Kingston 9905469-143.A00LF 4GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3600C17-16GTZ 16GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Kingston KHX3200C20S4/16GX 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M378A5244CB0-CWE 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
G Skill Intl F4-3200C16-32GVK 32GB
A-DATA Technology VDQVE1B16 2GB
Kingston MSI26D4S9S8HJ-8 8GB
Corsair CML8GX3M2A1866C9 4GB
Samsung SH5724G4UNC26P2-SC 32GB
A-DATA Technology DDR3 1600 4GB
Essencore Limited IM44GU48N26-GIIHA0 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Report a bug
×
Bug description
Source link