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A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3200C14-16GTZSW 16GB

A-DATA Technology DQKD1A08 1GB vs G Skill Intl F4-3200C14-16GTZSW 16GB

Overall score
star star star star star
A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Overall score
star star star star star
G Skill Intl F4-3200C14-16GTZSW 16GB

G Skill Intl F4-3200C14-16GTZSW 16GB

Differences Specifications Comments

Differences

A-DATA Technology DQKD1A08 1GB Reasons to consider
A-DATA Technology DQKD1A08 1GB
Report a bug
G Skill Intl F4-3200C14-16GTZSW 16GB Reasons to consider
G Skill Intl F4-3200C14-16GTZSW 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 52
    Around -100% lower latency
  • Faster reading speed, GB/s
    20.6 left arrow 2
    Average value in the tests
  • Faster write speed, GB/s
    16.7 left arrow 1,145.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 4200
    Around 4.05 higher bandwidth

Specifications

Complete list of technical specifications
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3200C14-16GTZSW 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    52 left arrow 26
  • Read speed, GB/s
    2,614.5 left arrow 20.6
  • Write speed, GB/s
    1,145.9 left arrow 16.7
  • Memory bandwidth, mbps
    4200 left arrow 17000
Other
  • Description
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    4-4-4-12 / 533 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    409 left arrow 4084

A-DATA Technology DQKD1A08 1GB RAM comparisons

SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB

G Skill Intl F4-3200C14-16GTZSW 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

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