RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology VDQVE1B16 2GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Compare
A-DATA Technology VDQVE1B16 2GB vs Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Overall score
A-DATA Technology VDQVE1B16 2GB
Overall score
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology VDQVE1B16 2GB
Report a bug
Faster reading speed, GB/s
4
14.5
Average value in the tests
Faster write speed, GB/s
2,061.2
10.4
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Report a bug
Below the latency in the PassMark tests, ns
38
46
Around -21% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
38
Read speed, GB/s
4,937.3
14.5
Write speed, GB/s
2,061.2
10.4
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
759
2429
A-DATA Technology VDQVE1B16 2GB RAM comparisons
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
Kingston HP26D4U6S8ME-8X 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-16GSXWB 16GB
A-DATA Technology DDR3 1600 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
A-DATA Technology VDQVE1B16 2GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Kingston KHX2133C14D4/8G 8GB
SK Hynix HMP125U6EFR8C-S6 2GB
V-Color Technology Inc. TA48G30S815GK 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Samsung M395T2863QZ4-CF76 1GB
Samsung M391A2K43BB1-CPB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Mushkin MRA4S300GJJM16G 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Apacer Technology 78.C2GFA.AF30B 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston KHX2400C14D4/16G 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Corsair CMU64GX4M4C3000C15 16GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston KHX2133C13D4/4GX 4GB
Report a bug
×
Bug description
Source link